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| MJF6388 (NPN), MJF6668 (PNP) Preferred Device Complementary Power Darlingtons For Isolated Package Applications Designed for general-purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. Features http://onsemi.com * Isolated Overmold Package, TO-220 Type * Electrically Similar to the Popular 2N6388, 2N6668, TIP102, and * * * * * * * * TIP107 100 VCEO(sus) 10 A Rated Collector Current No Isolating Washers Required Reduced System Cost High DC Current Gain - 1000 (Min) @ IC = 5.0 Adc High Isolation Voltage (up to 4500 VRMS) Case 221D is UL Recognized at 3500 VRMS: File #E69369 Pb-Free Packages are Available* Rating Symbol VCEO VCB VEB Value 100 100 5.0 COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS, 40 WATTS MARKING DIAGRAM 1 2 MAXIMUM RATINGS 3 TO-220 FULLPACK CASE 221D STYLE 2 UL RECOGNIZED MJF6xy8G AYWW IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III I I I I I I I I I IIIIIIIIIII IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III I I I I I I I I I IIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III III I I I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III III I III I I IIIIIIIIIIIIIIIIIIII III II IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III III IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII III I I I I I I I I I IIIIIIIIIII IIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIII Unit Vdc Vdc Vdc V Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage RMS Isolation Voltage (Note 1) Test No. 1 Per Figure 14 Test No. 2 Per Figure 15 Test No. 3 Per Figure 16 (for 1 sec, R.H. < 30%, TA = 25_C) Collector Current - Continuous - Peak (Note 2) VISOL 4500 3500 1500 10 15 IC IB Adc Adc Base Current - Continuous 1.0 Total Power Dissipation (Note 3) @ TC = 25_C Derate above 25_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD PD 40 0.31 W W/_C W W/_C _C 2.0 0.016 Operating and Storage Temperature Range Characteristic TJ, Tstg -65 to +150 Max 4.0 MJF6xy8 G A Y WW = Specific Device Code x = 3 or 6 y = 6 or 8 = Pb-Free Package = Assembly Location = Year = Work Week ORDERING INFORMATION Device MJF6388 MJF6388G MJF6668 MJF6668G Package TO-220 FULLPACK TO-220 FULLPACK (Pb-Free) TO-220 FULLPACK TO-220 FULLPACK (Pb-Free) Shipping 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail THERMAL CHARACTERISTICS Symbol RqJC RqJA Unit Thermal Resistance, Junction-to-Case (Note 3) Thermal Resistance, Junction-to-Ambient _C/W _C/W 62.5 Lead Temperature for Soldering Purposes TL 260 _C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Proper strike and creepage distance must be provided. 2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%. 3. Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a heatsink with thermal grease and a mounting torque of 6 in. lbs. (c) Semiconductor Components Industries, LLC, 2006 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Publication Order Number: MJF6388/D April, 2006 - Rev. 8 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII I IIIIIIIIIIIII II I II I I IIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII I IIIIIIIIIIIII II I II I I I IIIIIIIIIIIIIIIIIIII IIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I I IIII I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII IIII I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I I I I I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIII I I II I IIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I I I I I I I IIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I I IIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 4) OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc) Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) Collector-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 0.1 Adc) Base-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 0.1 Adc) DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc) DC Current Gain (IC = 8.0 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc) Collector Cutoff Current (VCE = 100 Vdc, VEB(off) = 1.5 Vdc) Collector Cutoff Current (VCE = 100 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C) Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) Insulation Capacitance (Collector-to-External Heatsink) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz) Base-Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc) Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) Collector Cutoff Current (VCE = 80 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (Note 4) (IC = 30 mAdc, IB = 0) BASE NPN MJF6388 8k Characteristic 120 COLLECTOR EMITTER MJF6388 (NPN), MJF6668 (PNP) Figure 1. Darlington Schematic http://onsemi.com MJF6388 MJF6668 BASE VCEO(sus) 2 PNP MJF6668 Symbol VCE(sat) VBE(sat) VBE(on) Cc-hs ICBO ICEO IEBO ICEX |hfe| Cob hFE hfe 8k 120 1000 3000 1000 200 100 COLLECTOR Min 100 20 - - - - - - - - - - - - - - EMITTER 3.0 Typ 15000 - - - 200 300 2.5 2.8 4.5 2.0 2.0 2.5 3.0 2.0 10 3.0 10 10 - - MaxIIII Unit - mAdc mAdc mAdc mAdc mAdc Vdc Vdc Vdc Vdc pF pF - - - MJF6388 (NPN), MJF6668 (PNP) RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES, e.g., MUR110 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA V1 APPROX. +12 V 51 V2 APPROX. -8 V tr, tf 10 ns DUTY CYCLE = 1% RB 8k 120 VCC + 30 V RC TUT SCOPE D1 25 ms -4 V FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. Figure 2. Switching Times Test Circuit NPN MJF6388 7 5 3 ts t, TIME ( s) tf 1 0.7 0.3 0.2 0.1 0.07 0.1 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 10 7 5 3 2 1 0.7 0.5 0.3 0.2 PNP MJF6668 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C ts tr t, TIME ( s) td td tf 1 0.5 2 IC, COLLECTOR CURRENT (AMPS) 5 10 0.1 0.1 0.2 3 0.5 0.7 1 2 0.3 IC, COLLECTOR CURRENT (AMPS) 5 7 10 Figure 3. Typical Switching Times 20 IC, COLLECTOR CURRENT (AMPS) 10 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 100 ms 1 ms TJ = 150C dc 5 ms CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) 1 5 20 30 2 3 10 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 Figure 4. Maximum Forward Bias Safe Operating Area http://onsemi.com 3 MJF6388 (NPN), MJF6668 (PNP) 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1 23 5 10 20 30 50 t, TIME (ms) 100 200 300 500 1K 2K 3K 5K 10K 20K 30K 50K 100K 0.05 SINGLE PULSE D = 0.5 0.2 RqJC(t) = r(t) RqJC RqJC = C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 Figure 5. Thermal Response 1 SECOND BREAKDOWN DERATING POWER DERATING FACTOR 0.8 0.6 THERMAL DERATING 0.4 0.2 0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 4 is based on TJ(pk) = l50_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. 160 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (C) Figure 6. Maximum Power Derating NPN MJF6388 10,000 hfe , SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1 2 5 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 TC = 25C VCE = 4 Vdc IC = 3 Adc 10,000 hFE , SMALL-SIGNAL CURRENT GAIN 5000 2000 1000 500 200 100 50 20 10 1 23 5 7 10 20 30 50 70 100 f, FREQUENCY (kHz) 200 300 500 1000 TC = 25C VCE = 4 VOLTS IC = 3 AMPS PNP MJF6668 Figure 7. Typical Small-Signal Current Gain http://onsemi.com 4 MJF6388 (NPN), MJF6668 (PNP) NPN MJF6388 300 TJ = 25C 200 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 200 300 TJ = 25C PNP MJF6668 100 70 Cib 50 Cob 100 70 50 Cib Cob 30 0.1 0.2 0.5 1 2 5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 30 0.1 0.2 0.5 1 2 5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 8. Typical Capacitance 20,000 VCE = 4 V 10,000 hFE, DC CURRENT GAIN 5000 3000 2000 1000 500 300 200 0.1 TJ = 150C 20,000 VCE = 4 V 10,000 hFE, DC CURRENT GAIN 7000 5000 3000 2000 25C 1000 700 500 300 200 0.1 TJ = 150C 25C -55 C -55 C 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 9. Typical DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3 TJ = 25C 2.6 IC = 2 A 4A 6A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 3 TJ = 25C 2.6 IC = 2 A 4A 6A 2.2 2.2 1.8 1.8 1.4 1 0.3 1.4 1 0.3 0.5 0.7 1 2 3 5 7 10 20 30 IB, BASE CURRENT (mA) 0.5 0.7 1 2 3 5 7 10 20 30 IB, BASE CURRENT (mA) Figure 10. Typical Collector Saturation Region http://onsemi.com 5 MJF6388 (NPN), MJF6668 (PNP) NPN MJF6388 3 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 3 TJ = 25C PNP MJF6668 2 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4 V 1 VCE(sat) @ IC/IB = 250 0.5 0.1 2 1.5 VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250 1 VCE(sat) @ IC/IB = 250 0.5 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 11. Typical "On" Voltages +5 V, TEMPERATURE COEFFICIENT (mV/ C) +4 +3 +2 +1 0 -1 -2 -3 -4 -5 0.1 *qVC for VCE(sat) qVB for VBE 25C to 150C -55 C to 25C 0.5 0.7 1 2 3 5 7 10 -55 C to 25C 25C to 150C *IC/IB hFE/3 V, TEMPERATURE COEFFICIENT (mV/ C) +5 +4 +3 +2 +1 0 -1 -2 -3 -4 -5 0.2 0.3 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 0.5 0.7 1 23 IC, COLLECTOR CURRENT (AMP) 5 7 10 *qVC for VCE(sat) qVB for VBE 25C to 150C -55 C to 25C -55 C to 25C 25C to 150C *IC/IB hFE/3 Figure 12. Typical Temperature Coefficients 105 IC, COLLECTOR CURRENT ( A) IC, COLLECTOR CURRENT ( A) 104 103 102 TJ = 150C 101 100 100C REVERSE VCE = 30 V FORWARD 105 REVERSE 104 VCE = 30 V 103 102 101 100 10-1 +0.6 +0.4 25C +0.2 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ = 150C 100C FORWARD 25C 10-1 -0.6 - 0.4 -0.2 0 +0.2 +0.4 +0.6 +0.8 +1 +1.2 +1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) Figure 13. Typical Collector Cut-Off Region http://onsemi.com 6 MJF6388 (NPN), MJF6668 (PNP) TEST CONDITIONS FOR ISOLATION TESTS* MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE CLIP CLIP 0.099" MIN LEADS 0.099" MIN LEADS HEATSINK 0.110" MIN HEATSINK HEATSINK Figure 14. Clip Mounting Position for Isolation Test Number 1 Figure 15. Clip Mounting Position for Isolation Test Number 2 Figure 16. Screw Mounting Position for Isolation Test Number 3 *Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION 4-40 SCREW PLAIN WASHER CLIP HEATSINK COMPRESSION WASHER NUT HEATSINK Figure 17. Typical Mounting Techniques* Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. http://onsemi.com 7 MJF6388 (NPN), MJF6668 (PNP) PACKAGE DIMENSIONS TO-220 FULLPAK CASE 221D-03 ISSUE G -T- F Q A 123 SEATING PLANE -B- C S U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. INCHES MIN MAX 0.625 0.635 0.408 0.418 0.180 0.190 0.026 0.031 0.116 0.119 0.100 BSC 0.125 0.135 0.018 0.025 0.530 0.540 0.048 0.053 0.200 BSC 0.124 0.128 0.099 0.103 0.101 0.113 0.238 0.258 MILLIMETERS MIN MAX 15.88 16.12 10.37 10.63 4.57 4.83 0.65 0.78 2.95 3.02 2.54 BSC 3.18 3.43 0.45 0.63 13.47 13.73 1.23 1.36 5.08 BSC 3.15 3.25 2.51 2.62 2.57 2.87 6.06 6.56 H K -Y- G N L D 3 PL M J R DIM A B C D F G H J K L N Q R S U 0.25 (0.010) B M Y STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 MJF6388/D |
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